Original IRFB4227 MOSFET N-CH 200V 65A TO-220AB IRFB4227

datasheet

Features
Advanced Process Technology
Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
Low EPULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
Low QG for Fast Response
High Repetitive Peak Current Capability for
Reliable Operation
Short Fall & Rise Times for Fast Switching
175°C Operating Junction Temperature for
Improved Ruggedness
Repetitive Avalanche Capability for Robustness
and Reliability
Class-D Audio Amplifier 300W-500W

FEATURES ·Static drain-source on-resistance:
RDS(on) ≤24mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation ·DESCRITION ·175℃ operating junction temperature and high repetitive peak
current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VDSS Drain-Source Voltage 200 V
VGS Gate-Source Voltage ±30 V
ID Drain Current-Continuous 65 A
IDM Drain Current-Single Pulsed 260 A
PD Total Dissipation @TC=25℃ 330 W
Tj Max. Operating Junction Temperature 175 ℃
Tstg Storage Temperature -40~175 ℃ ·THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
Rth(ch-c) Channel-to-case thermal resistance
0.45 ℃/W
Rth(ch-a) Channel-to-ambient thermal resistance
62 ℃/W

 

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