Features
• Maximum Clock 10 MHz
• Low-Power CMOS Technology:
– Maximum Write Current: 5 mA at 5.5V,
10 MHz
– Read Current: 5 mA at 5.5V, 10 MHz
– Standby Current: 5 µA at 5.5V
• 4096 x 8-bit Organization
• 32-Byte Page
• Self-Timed Erase and Write Cycles (5 ms
maximum)
• Block Write Protection:
– Protect none, 1/4, 1/2 or all of array
• Built-in Write Protection:
– Power-on/off data protection circuitry
– Write enable latch
– Write-protect pin
• Sequential Read
• High Reliability:
– Endurance: >1M erase/write cycles
– Data retention: > 200 years
– ESD protection: > 4000V
• Temperature Ranges Supported:
• RoHS Compliant
• Automotive AEC-Q100 Qualified
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