NEW AND ORIGINAL Supplier Transistor Bd137 Transistor Transistor Bd139 Bd135

datasheet

SILICON NPN EPITAXIAL TYPE (PCT PROCESS) BD135 BD137 BD1 39I MEDIUM POWER AMP LIFIER APPLICATIONS.
FEATURES .
Designe d for Complementary Use with BD136, BD1 38 and BD140.
7.
9MAX.
Unit in mm MAX IMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage BD135 BD137 B D139 Collector-Emitter Voltage BD135 BD137 BD139 Emitter-Base Voltage Coll ector Current DC Peak Collector Power Dissipation Ta=25 C Tc^60 C Junction Temperature Storage Temperature Range SYMBOL VCBO v CEO Vebo I CM RATING 4 5 60 80 45 60 80 0.
5 1.
5 PC L stg 6.
5 150 -55-150 UNIT 1.
EMITTER Z.
COLLE CTOR (HEAT S IN .

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