- Manufacturer: Infineon
- Product Category: MOSFET
- Technology: Si
- Mounting Style: SMD/SMT
- Package / Case: TO-252-3
- Transistor Polarity: N-Channel
- Number of Channels: 1 Channel
- Vds – Drain-Source Breakdown Voltage: 60 V
- Id – Continuous Drain Current: 90 A
- Rds On – Drain-Source Resistance: 6.9 mOhms
- Vgs – Gate-Source Voltage: – 20 V, + 20 V
- Vgs th – Gate-Source Threshold Voltage: 3 V
- Qg – Gate Charge: 56 nC
- Minimum Operating Temperature: – 55 C
- Maximum Operating Temperature: + 175 C
- Pd – Power Dissipation: 79 W
- Channel Mode: Enhancement
- Qualification: AEC-Q101
- Packaging: Reel
- Packaging: Cut Tape
- Brand: Infineon Technologies
- Configuration: Single
- Height: 2.3 mm
- Length: 6.5 mm
- Product Type: MOSFET
- Series: IPD90N06
- Subcategory: MOSFETs
- Transistor Type: 1 N-Channel
- Width: 6.22 mm
- Part # Aliases: IPD90N06S4-07 SP001028680
- Unit Weight: 0.011640 oz
