electronic components40N60NPFD TO-3P Electronic Coponent 40N60 Transistor 40N60 IGBT 40N60 Mosfet 40N60NPFD

datasheet

Description :

40N60NPFD using Field Stop IGBT technology, offer the optimum performance for induction Heating, UPS, SMPS and PFC application.

Features

1. 40A, 600V, VCE(sat)(typ.)=1.8V@IC=40A
2. Low conduction loss
3. Fast switching
4. High input impedance

Absolute maximum ratings ( Ta=25°C )

1. Collector to Emitter Voltage : VCE = 600 V
2. Gate to Emitter Voltage : VGE = ±20 V
3. Collector Current : Ic = 80 A
4. Pulsed Collector Current : ICM = 120 A
5. Maximum Power Dissipation (TC=25°C) : PD = 290 W
6. Operating Junction Temperature TJ -55~+175 °C
7. Storage Temperature Range Tstg -55~+175 °C

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